"gate" in inglés with examples - Collocation dictionary inglés
- A 20nm thick gate oxide is grown on top.
- This process has 120-angstrom gate oxide that did not tolerate 5.0 V operation.
- For the traditional gate oxide, silicon dioxide, the former barrier is approximately 8 eV.
- Since metal 2 is not built yet, there is no diode connected to the gate oxide.
- If the diode is connected to metal near the gate(s), it can protect the gate oxide.
- Another implantation is then completed using a different dopant type, with ions penetrating the gate oxide.
- The gate oxide is very thin (100 nm or less), so it can only sustain a limited voltage.
- Overstressing the gate oxide can lead to stress-induced leakage current.
- That layer is sometimes called the "gate oxide."
- The thickness of the gate oxide and the active layer is below one micrometer.
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