depletion layer

Associated with the depletion layer is an effect known as band bending.

In both cases this leads to a separation of charges (such as through a depletion layer).

The net result is that trying to create a region beneath the gate where there are no electrons (a depletion layer) becomes very hard work indeed.

The avalanche breakdown occurs in lightly doped junctions, which produce a wider depletion layer.

The depletion layer at the junction is at the origin of the diode's rectifying properties.

The regions nearby the p-n interfaces lose their neutrality and become charged, forming the space charge region or depletion layer (see figure A).

In effect, the capacitance across the depletion layer in the semiconductor is bias voltage dependent and goes as .

This depletion layer can also be made of a MOS or a Schottky diode.

When both sides of the pn junction (called a depletion layer) which is lightly doped become large enough avalanche breakdown takes place.

These layers of fixed positive and negative charges, collectively known as the depletion layer because they are depleted of free electrons and holes.

Heavier doping is also associated with thinner depletion layers and more recombination centers that result in increased leakage current, even without lattice damage.

The depletion layer between the n- and p-sides of a p-n-diode serves as an insulating region that separates the two diode contacts.

The depletion layer is so-called because it is depleted of mobile carriers and so is electrically non-conducting for practical purposes.

When the depletion layer spans the width of the conduction channel, "pinch-off" is achieved and drain to source conduction stops.

The thickness of the depletion layer of a reverse-biased semiconductor diode varies with the DC voltage applied across the diode.

In reverse bias the width of the depletion layer is widened with increasing reverse bias v, and the capacitance is accordingly decreased.

The figure shows an example of a cross section of a varactor with the depletion layer formed of a PN junction.

The width of the depletion layer can be calculated by solving Poisson's equation and considering the presence of dopants in the semiconductor:

This is due to the resulting internal field and corresponding potential barrier which inhibit current flow in reverse applied bias which increases the internal depletion layer field.

"At this bias, the electric field is so high [higher than 3x10 V/cm] that a single charge carrier injected into the depletion layer can trigger a self-sustaining avalanche.

A particle may diffuse to a surface in quiescent conditions, but this process is inefficient as a thick depletion layer develops, which leads to a progressive slowing down of the deposition.

Compared to forward bias, this dramatically reduces the response time at the expense of increased noise, because it increases the width of the depletion layer, which decreases the junction's capacitance.

"PC-1D Modeling of Depletion Layer Recombination in GaAs Solar Cells," Proc.

The depletion layer dopant is labeled N to indicate that the ions in the (pink) depletion layer are negatively charged and there are very few holes.

The shape of the curve is determined by the transport of charge carriers through the so-called depletion layer or depletion region that exists at the p-n junction between differing semiconductors.