Despite having high carrier concentrations, the electron mobilities are also very high (up to 100,000 cm/Vs).

The intrinsic carrier concentration is a function of temperature.

Based on Hall measurements, these films have a low carrier concentration and high mobility compared to other devices.

This low carrier concentration is similar to an intrinsic (perfectly undoped) crystal, but much easier to achieve in practice.

When carrier concentration is high, this type of scattering reflects the electrostatic interaction between charge carriers.

The degree of band bending depends on the relative Fermi levels and carrier concentrations of the materials forming the junction.

The size of the band-gap means that BiTe has high intrinsic carrier concentration.

The Seebeck effect could also be used to determine the carrier concentration and Fermi energy in nanowires.

The most important factor that doping directly affects is the material's carrier concentration.

Intrinsic carrier concentration varies between materials and is dependent on temperature.