The number of dopant atoms needed to create a difference in the ability of a semiconductor to conduct is very small.

For a given fabrication process, the V is adjusted by altering the concentration of dopant atoms in the channel region beneath the gate oxide.

Then, these dopant atoms actually carry out the lasing process in the crystal.

This example finds its real application in a semiconductor, where the ionization of an dopant atom is well described by this ensemble.

Semiconductors and dopant atoms are defined by the column of the periodic in which they fall.

The resulting motion of the tip can be used to measure the amount of dopant atoms below it.

Because E is so small, it takes little energy to ionize the dopant atoms and create free carriers in the conduction or valence bands.

Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity.

When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as heavy or high.