A strong positive voltage applied to the gate draws excess mobile electrons (which are negatively charged) into a layer between the insulator and the semiconductor.

These excess electrons are knocked out from atoms either by photoeffect or by shower electrons and positrons (ionization).

Thus, there is an electric current created by the excess electrons associated with shower.

The wide band element is doped with donor atoms; thus it has excess electrons in its conduction band.

If ADP levels fall, the rate of respiration decreases and causes the electron transport chain to become over-reduced with excess electrons.

These excess electrons pass to oxygen and form ROS.

The rule that excess electrons in the ring produces an exceptionally stable ("aromatic") compound, is known as the Hückel's rule.

When the device is biased, excess electrons and holes are generated and flow into the active region, where they recombine and emit light.

An explanation of the beast would include the following: The excess electrons from the generator are stored on one plate making it negative in polarity.

He studied theoretically the interaction of intramolecular excitations or excess electrons with autolocal breaking of the translational symmetry.