Therefore, at the solid/liquid boundary, the impurity atoms will diffuse to the liquid region.

Researchers built the channel so that it is free of dopants, stopping the charges from bumping into impurity atoms along the way.

Ion irradiation is routinely used to implant impurity atoms into materials, especially semiconductors, to modify their properties.

This is achieved by introducing interface scattering mechanism, which requires structures whose characteristic length is longer than that of impurity atom.

Small impurity interstitial atoms are usually on true off-lattice sites between the lattice atoms.

During doping, impurity atoms are introduced to an intrinsic semiconductor.

Iron atoms in copper cause the renowned Kondo effect where the conduction electron spins form a magnetic bound state with the impurity atom.

This relieves a tensile strain directly below the dislocation by filling that empty lattice space with the impurity atom.

Adding impurity atoms to a semiconducting material, known as "doping", greatly increases the number of charge carriers within it.

They are large enough to accommodate impurity atoms.